鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
*
Base-emitter saturation voltage
*
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2. *: Pulse measurement
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
= 1
mA, I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
25 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
V
CE
=
2 V, I
C
=
500 mA
V
CE
=
2 V, I
C
=
1 A
I
C
= 500
mA, I
B
= 20
mA
I
C
= 500
mA, I
B
= 50
mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
150
6
65
50
0.2
0.4
1.2
V
V
MHz
pF
Min
25
20
7
0.1
1
350
Typ
Max
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00077BED
0.4
鹵0.2
5藲
1
1
2
3
